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Optical gain in an interband-resonant-tunneling-diode

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2 Author(s)
B. Gelmont ; ECE Dept., Virginia Univ., Charlottesville, VA, USA ; D. Woolard

A new concept is presented for the generation of optical gain within an interband-resonant-tunneling-diode (I-RTD). Model equations are derived in terms of material and structure parameters for predicting the optical gain in an I-RTD device constructed of InAs/AlGaSb layers. Simulation results suggest that gain in this I-RTD can be 40 times larger than that of a quantum-well laser based on GaAs/AlGaAs.

Published in:

Nanotechnology, 2004. 4th IEEE Conference on

Date of Conference:

16-19 Aug. 2004