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On the modeling of semiconductor quantum effects for circuit simulation

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3 Author(s)
Felgenhauer, F. ; Inst. of Electromagn. Theory & Microwave Technique, Hannover Univ., Germany ; Fabel, S. ; Mathis, W.

In this paper, we discuss the impact of quantum effects on the functionality of classical circuit concepts. To be most general we concentrate on MOS semiconductors, relying on the multiplicity of discussions in the literature. Instead of focussing on device simulations we investigate the impact of parasitic quantum effects in classical circuits built by the nano-scaled devices.

Published in:

Nanotechnology, 2004. 4th IEEE Conference on

Date of Conference:

16-19 Aug. 2004