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We analyze micro-pillar micro-cavities of III-V semiconductor materials and propose a new type of micro-pillar micro-cavity based on an annular geometry using 3-D finite-difference time-domain (FDTD) method. A dipole source in the cavity region models a single quantum-dot source. We find strong modifications to the dipole emission due to the small modal volume and high Q-factor. We then discuss application to the development of efficient single-photon sources for use in quantum information processing.