STTM-promising nanoelectronic DRAM device

We have examined STTM as the alternative to DRAM in terms of scalability, operation power, and sensing signal. The characteristics of STTM are shown to strongly depend on those of vertical transistor. To obtain maximum performance, fully depleted vertical transistor is essential. Moreover, it is shown that scaling below 50 nm could exhibit long enough retention time for nonvolatile random access memory application.