Cart (Loading....) | Create Account
Close category search window
 

Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Wei-Yip Loh ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore ; Jin Cho, Byung ; Moon Sig Joo ; Ming-Fu Li
more authors

Charge trapping and breakdown mechanism in p- and n-channel MOSFETs with an HfAlxOy and TaN metal electrode are investigated. Using carrier separation measurement technique, it is possible to clearly distinguish two different breakdown mechanisms: a high-K bulk initiated and an interfacial layer initiated breakdown. A model of charge trapping at different spatial locations in HfAlxOy with a TaN gate structure is proposed to explain the polarity dependence of charge trapping characteristics and breakdown mechanisms.

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:4 ,  Issue: 4 )

Date of Publication:

Dec. 2004

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.