Referenced Items are not available for this document.
Device parameters degradation of nonlinear elements subject to drain and gate voltage stress is examined experimentally. Analysis of metal-oxide-semiconductor field-effect transistor linearity degradation due to stress is given. Effects on radio frequency (RF) circuit linearity are investigated systematically through a SpectreRF simulation based on measured device data.
Published in:
Device and Materials Reliability, IEEE Transactions on
(Volume:4
,
Issue:
4
)
Date of Publication: Dec. 2004
- Page(s):
- 681 - 689
- ISSN :
- 1530-4388
- INSPEC Accession Number:
- 8276503
- Digital Object Identifier :
- 10.1109/TDMR.2004.838407
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 31 January 2005
- Issue Date :
- Dec. 2004
- Sponsored by :
- IEEE Electron Devices Society
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