Referenced Items are not available for this document.
The influence of gate oxide breakdown of one MOS transistor on the functionality of simple analog and digital circuits is studied. The main changes in the transistor behavior such as the additional gate current as well as transconductance and threshold voltage degradation are pointed out and their respective impact on circuit characteristics is analyzed. With this approach, it is possible to identify critical transistors during the design stage and implement appropriate countermeasures. Depending on the application, some circuits may be functional even after breakdown of one of their transistors.
Published in:
Device and Materials Reliability, IEEE Transactions on
(Volume:4
,
Issue:
4
)
Date of Publication: Dec. 2004
- Page(s):
- 676 - 680
- ISSN :
- 1530-4388
- INSPEC Accession Number:
- 8276502
- Digital Object Identifier :
- 10.1109/TDMR.2004.836729
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 31 January 2005
- Issue Date :
- Dec. 2004
- Sponsored by :
- IEEE Electron Devices Society
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