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The relative dielectric constant versus voltage (εr-V) characteristics and the current density versus electric field (J-E) characteristics of (Ba0.5Sr0.5)TiO3 films, which have intentionally inserted oxygen depleted layers near the bottom electrodes, were investigated as a model of dc-electrical degradation phenomena. Our investigation demonstrated that the intentionally inserted oxygen depleted layer is the cause of the tunneling conduction.
Device and Materials Reliability, IEEE Transactions on (Volume:4 , Issue: 4 )
Date of Publication: Dec. 2004