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Impact of temperature-accelerated voltage stress on PMOS RF performance

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4 Author(s)
Chuanzhao Yu ; Electr. & Comput. Eng. Dept., Univ. of Central Florida, Orlando, FL, USA ; Yi Liu ; Sadat, A. ; Jiann-Shiun Yuan

The thermal electrochemical analysis and modeling of negative bias temperature instability, oxide breakdown, and hot-carrier injection effects on metal-oxide-semiconductor devices are performed. The temperature-accelerated voltage stress has been examined experimentally. A subcircuit model aiming to evaluate the stress-induced degradation via simulation is developed. The measured and simulated performance for fresh and stressed devices at different temperatures is presented. The radio frequency performance degradation of a test circuit due to temperature-accelerated voltage stress is investigated.

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:4 ,  Issue: 4 )

Date of Publication:

Dec. 2004

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