By Topic

Flash memory under cosmic and alpha irradiation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Fogle, A.D. ; Adv. Micro Devices Inc., Sunnyvale, CA, USA ; Don Darling ; Blish, R.C. ; Daszko, E.

Neutron and proton irradiation to simulate cosmic ray jeopardy were used to establish that NOR Flash memory (conventional floating polySi gate or ONO floating gate MirrorBit) soft error failure rate (cross section) is 3-5 orders of magnitude better than SRAM. Flash memory soft error rate for a given dose of alpha particle irradiation is much less than for the same dose from simulated cosmic rays.

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:4 ,  Issue: 3 )