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Flash memory under cosmic and alpha irradiation

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4 Author(s)
Fogle, A.D. ; Adv. Micro Devices Inc., Sunnyvale, CA, USA ; Don Darling ; Blish, R.C. ; Daszko, E.

Neutron and proton irradiation to simulate cosmic ray jeopardy were used to establish that NOR Flash memory (conventional floating polySi gate or ONO floating gate MirrorBit) soft error failure rate (cross section) is 3-5 orders of magnitude better than SRAM. Flash memory soft error rate for a given dose of alpha particle irradiation is much less than for the same dose from simulated cosmic rays.

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:4 ,  Issue: 3 )

Date of Publication:

Sept. 2004

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