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A new level shifter in ultra deep sub-micron for low to wide range voltage applications

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4 Author(s)
Kyoung-Hoi Koo ; Design Core Dev. Team, Ssmsung Electron., Kyungki-Do, South Korea ; Jin-Ho Seo ; Myeong-Lyong Ko ; Jae-Whui Kim

A level shifter aimed at ultra low core voltage and wide range I/O voltage is designed using a 90nm CMOS process. Proposed level shifter uses analog circuit techniques and zero-Vt transistor with no extra process step, no static power and stable duty ratio make this level shifter suitable for ultra low core voltage and wide range I/O voltage applications. These techniques work even 0.6V core voltage, 1.65-3.6V I/O voltage within 45:55 duty ratio up to 200MHz.

Published in:

SOC Conference, 2004. Proceedings. IEEE International

Date of Conference:

12-15 Sept. 2004

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