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A process independent model for calculating the electromagnetic coupling between inductors and interconnects in CMOS technology is presented. This model is simple since it only requires three parameters, which can be readily extracted from a small number of simulations or measurements. Once these parameters are obtained, the model predicts the coupling between any given inductor and trace (for any length of the trace and distance of separation). This scalability with respect to size of the coil & trace and distance of separation provides insight into coupling effects before/during the layout phase. The model is validated for two separate CMOS processes.