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A micro-electro-mechanical (MEMS) DC to RF shunt switch was fabricated using a bulk micromachining process for single crystal silicon. The switch was vertically integrated to a microwave circuit using flip-chip bonding technology. The pull-in voltage and switching time were measured. Also, RF characterization of switch states was performed. This new design offers the potential for a high power applications switch. The concept of the described packaged switch offers a stand alone switch, which is not dependent on substrate material or technology.