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CdTe and (Cd,Zn)Te crystals were grown to study the compensation mechanism and the influence on the transport properties. Undoped and doped crystals with Sn, In and Ge were grown. The crystals showed resistivities up to 109 Ωcm and higher. The transport properties depended strongly on the dopant and the compensation mechanism. For the doping with a deep donor the mobility-lifetime product of electrons were 2 × 10-5 cm/V and 4 × 10-4 cm2/V for Ge and Sn doped, respectively. The highest values was obtained for In doped (Cd,Zn)Te with 3.3 × 10-3 cm2/V.