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A 16Mb MRAM featuring bootstrapped write drivers

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20 Author(s)
J. DeBrosse ; IBM Microeletronics Div., Essex Junction, VT, USA ; C. Arndt ; C. Barwin ; A. Bette
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A 16Mb Magnetic Random Access Memory (MRAM) is demonstrated in 0.18 μm three-Cu-level CMOS with a three-level MRAM process adder. The chip, the highest density MRAM reported to date, utilizes a 1.42 μm2 1-Transistor 1-Magnetic Tunnel Junction (1T1MTJ) cell, measures 79mm2 and features a ×16 asynchronous SRAM-like interface. The paper describes the cell, architecture, and circuit techniques unique to multi-Mb MRAM design, including a novel bootstrapped write driver circuit. Hardware results are presented.

Published in:

VLSI Circuits, 2004. Digest of Technical Papers. 2004 Symposium on

Date of Conference:

17-19 June 2004