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On-die CMOS leakage current sensor for measuring process variation in sub-90nm generations

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5 Author(s)
C. H. Kim ; Purdue Univ., West Lafayette, IN, USA ; K. Roy ; S. Hsu ; R. K. Krishnamurthy
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This paper describes an on-die leakage current sensor in 1.2V, 90nm CMOS technology for accurately measuring process variation. Results based on measured leakage data show (i) higher signal-to-noise ratio and (ii) reduced sensitivity to supply and P/N skew variations compared to prior designs, while the proposed sensor only requires a single bias generator even for multi-bit resolution sensing. A 6-channel leakage current monitor testchip fabricated in 90nm dual-Vt CMOS is also described.

Published in:

VLSI Circuits, 2004. Digest of Technical Papers. 2004 Symposium on

Date of Conference:

17-19 June 2004