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Ground bounce noise due to internal gate switching is studied. Unlike the ground bounce caused by switching of the output buffer, both power-rail and ground-rail impedances are important, and a double negative feedback mechanism must be considered. Based on the lumped-model analysis and taking into account the parasitic and velocity-saturation effects of MOS transistors, an analytical model is developed including both switching and non-switching gates. The proposed model is employed to analyse the on-chip decoupling capacitance, resonant frequency, wire/pin inductance and loading effect. Good agreement between the model predictions and SPICE simulation results is obtained.
Date of Publication: 12 Aug. 2004