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A 256 Mb flash memory based on 2 b/cell 0.17 μm NROM technology supports 90 ns random read access, 66 MHz synchronous read, and 3 μs/word programming. This 55 mm2 device includes an 8 b embedded microcontroller for program and erase operations, power-up sequence, BIST, and more. The microcontroller executes its code from an NROM-based embedded ROM, performing 30 ns/word read access.
Date of Conference: 15-19 Feb. 2004