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A 4Mb 0.18 μm 1T1MTJ Toggle MRAM memory

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7 Author(s)

The 4.5×6.3mm2 25ns cycle-time 4Mb Toggle MRAM memory, built in 0.18 μm 5M CMOS technology, uses a 1.55 μm2 bit cell with a single toggling magneto tunnel junction. The memory uses uni-directional programming currents with isolated write and read paths and balanced current mirror sense amplifier.

Published in:

Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International

Date of Conference:

19-19 Feb. 2004