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A 256 Mb NVDRAM is fabricated with a modified 0.115 μm DRAM process. The cell transistor has a scaled polysilicon-oxide-nitride-oxide-silicon (SONOS) structure that traps electrons or holes at a relatively low voltage stress. NVDRAM utilizes DRAM storage node boost from the cell plate for programming to ensure more reliable operation.
Date of Conference: 15-19 Feb. 2004