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High-frequency performance of subthreshold SOI MESFETs

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4 Author(s)
Jinman Yang ; Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA ; Spann, J. ; Anderson, R. ; Thornton, T.

Results from silicon-on-insulator (SOI) MESFETs designed for subthreshold operation are presented. The transistors have subthreshold slopes as low as 78 mV/dec and off-state drain currents approaching 1 pA/μm. Drain current saturation can be achieved with drain voltages of less than 0.5 V and with output impedance>100 M/spl Omega//spl middot/μm. The cutoff frequency of a 500-nm gate length device exceeds 1 GHz at currents significantly less than 1 μA/μm. These results suggest that subthreshold SOI MESFETs might have useful applications in mixed-signal, micropower circuit design.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 9 )