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Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR

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7 Author(s)
Niu Jin ; Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA ; Chung, Sung-Yong ; Heyns, R.M. ; Berger, Paul R.
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A vertically integrated npnp Si-based resonant interband tunneling diode (RITD) pair is realized with low-temperature molecular beam epitaxy by stacking two RITDs with a connecting backward diode between them. The current-voltage characteristics of the vertically integrated RITD pair demonstrates two sequential negative differential resistance regions in the forward-biasing condition. Tri-state logic is demonstrated by using the vertically integrated RITDs as the drive and an off-chip resistor as the load.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 9 )

Date of Publication:

Sept. 2004

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