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High-capacity, self-assembled metal-oxide-semiconductor decoupling capacitors

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8 Author(s)
Black, Charles T. ; IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA ; Guarini, K.W. ; Ying Zhang ; Kim, Hyungjun
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We combine nanometer-scale polymer self assembly with advanced semiconductor microfabrication to produce metal-oxide-semiconductor (MOS) capacitors with accumulation capacitance more than 400% higher than planar devices of the same lateral area. The self assembly technique achieves this degree of enhancement using only standard processing techniques, thereby obviating additional process complexity. These devices are suitable for use as on-chip power supply decoupling capacitors, particularly in high-performance silicon-on-insulator technology.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 9 )

Date of Publication:

Sept. 2004

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