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A surface-normal coupled-quantum-well modulator at 1.55 μm

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5 Author(s)
Stievater, T.H. ; Naval Res. Lab., Washington, DC, USA ; Rabinovich, W.S. ; Goetz, P.G. ; Mahon, R.
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We demonstrate a surface-normal coupled-quantum-well InGaAs-InAlAs electroabsorption modulator that provides optical modulation with a contrast ratio in excess of 1.5 at only 6 V. The device operates at 1.55 μm and is based on a novel strain-balanced layer structure. The operating voltage is about two times lower than that of a conventional square quantum-well modulator that achieves a comparable contrast ratio.

Published in:

Photonics Technology Letters, IEEE  (Volume:16 ,  Issue: 9 )

Date of Publication:

Sept. 2004

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