Referenced Items are not available for this document.
We present a promising method to achieve a high-performance GaInNAs quantum-well (QW) laser emitting 1.36 μm by metal-organic vapor phase epitaxy. It was found that the insertion of GaNAs-InGaAs layers to GaInNAs QW-GaAs barrier is very effective to control the emission wavelength and improve the optical property of QW. As the thickness of the GaNAs and InGaAs layers was decreased, the wavelength emitted from QW became longer. The optical efficiencies of the proposed QW structure were confirmed by the lasing performance in edge-emitting laser. The threshold current density and slope efficiency per facet of a 1360-nm laser diode are measured to be 892 A/cm2 and 0.135 W/A, respectively.
Published in:
Photonics Technology Letters, IEEE
(Volume:16
,
Issue:
9
)
Date of Publication: Sept. 2004
- Page(s):
- 1994 - 1996
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 8086538
- Digital Object Identifier :
- 10.1109/LPT.2004.831953
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 24 August 2004
- Issue Date :
- Sept. 2004
- Sponsored by :
- IEEE Photonics Society
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