MOVPE grown 1360-nm GaInNAs quantum-well laser with multibarrier structures

We present a promising method to achieve a high-performance GaInNAs quantum-well (QW) laser emitting 1.36 μm by metal-organic vapor phase epitaxy. It was found that the insertion of GaNAs-InGaAs layers to GaInNAs QW-GaAs barrier is very effective to control the emission wavelength and improve the optical property of QW. As the thickness of the GaNAs and InGaAs layers was decreased, the wavelength emitted from QW became longer. The optical efficiencies of the proposed QW structure were confirmed by the lasing performance in edge-emitting laser. The threshold current density and slope efficiency per facet of a 1360-nm laser diode are measured to be 892 A/cm
²
and 0.135 W/A, respectively.