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Improvement of voltage linearity in high-/spl kappa/ MIM capacitors using HfO2-SiO2 stacked dielectric

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9 Author(s)
Sun Jung Kim ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore ; Byung Jin Cho ; Ming-Fu Li ; Shi-Jin Ding
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It is demonstrated that the voltage coefficients of capacitance (VCC) in high-/spl kappa/ metal-insulator-metal (MIM) capacitors can be actively engineered and voltage linearity can be significantly improved maintaining high capacitance density, by using a stacked insulator structure of high-/spl kappa/ and SiO2 dielectrics. A MIM capacitor with capacitance density of 6 fFμm2 and quadratic VCC of only 14 ppm/V2 has been demonstrated together with excellent frequency and temperature dependence (temperature coefficients of capacitance of 54 ppm /spl deg/C) as well as low leakage current of less than 10 nA/cm2 up to 4 V at 125 /spl deg/C.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 8 )