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Self-aligned InP DHBT with fτ and fmax over 300 GHz in a new manufacturable technology

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19 Author(s)
Gang He ; Vitesse Semicond. Corp., Camarillo, CA, USA ; J. Howard ; M. Le ; P. Partyka
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We report self-aligned indium-phosphide double-heterojunction bipolar transistor devices in a new manufacturable technology with both cutoff frequency (fτ) and maximum oscillation frequency (fmax) over 300 GHz and open-base breakdown voltage (BVceo) over 4 V. Logic circuits fabricated using these devices in a production integrated-circuit process achieved a current-mode logic ring-oscillator gate delay of 1.95 ps and an emitter-coupled logic static-divider frequency of 152 GHz, both of which closely matched model-based circuit simulations.

Published in:

IEEE Electron Device Letters  (Volume:25 ,  Issue: 8 )