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Optical and laser properties of epitaxially grown passively Q-switched Cr4+:GGG/ Nd3+:GGG, Cr4+:YAG/ Yb3+:YAG and Cr4+:YAG/ Nd3+ :YAG microchip lasers

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10 Author(s)
K. Kopczynski ; Inst. of Optoelectron., Mil. Univ. of Technol., Warsaw, Poland ; J. Sarnecki ; Z. Mierczyk ; J. Skwarcz
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Liquid phase epitaxy technique is used to grow Cr4+ doped GGG and YAG monocrystalline thin films as a saturable absorber for passive Q-switching of Nd:GGG, Yb:YAG and Nd:YAG microchip lasers. Comparison of laser performance and influence of epitaxial film saturable absorber properties on microchip characteristics (repetition rate, pulse energy and pulse length) are reported.

Published in:

Quantum Electronics Conference, 2003. EQEC '03. European

Date of Conference:

22-27 June 2003