Cart (Loading....) | Create Account
Close category search window
 

Cavity solitons in driven VCSELs above threshold

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
4 Author(s)
Lugiato, L.A. ; Dipt. di Sci. Chimiche, Fisiche, e Matematiche, INFM, Como, Italy ; Tissoni, G. ; Protsenko, I. ; Brambilla, M.

This paper studies cavity solitons (CSs) in semiconductor microresonators adopting a phenomenological model recently proposed by Agrawal. It describes a semiconductor laser with a macroscopic polarisation, similar to a simple two level model (5 variables), but containing all the information concerning the physics of semiconductors. By performing the linear stability analysis, the authors found some regimes where the Hopf instability, typical of lasers above threshold, affects only the lower intensity branch of the homogeneous steady state, while the higher intensity branch is affected by a Turing instability. Preliminary numerical results obtained by direct integration of the dynamical equations show that stable localised structures, such as CSs, are possible in this regime, sitting on an unstable background. Therefore CSs result to be robust structure and possible candidates for optical information treatment also in VCSELS somewhat above threshold.

Published in:

Quantum Electronics Conference, 2003. EQEC '03. European

Date of Conference:

22-27 June 2003

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.