Referenced Items are not available for this document.
Improved functional reliability is demonstrated through implementation of a tungsten damascene process for creating local interconnects that results in a cleaner, more planar surface. Reduction in lateral shorts is posited as the driver for the substantial reduction in yield loss and failure following stress conditions.
Published in:
Advanced Semiconductor Manufacturing, 2004. ASMC '04. IEEE Conference and Workshop
Date of Conference: 4-6 May 2004
- Page(s):
- 472 - 476
- Print ISBN:
- 0-7803-8312-5
- INSPEC Accession Number:
- 8072781
- Digital Object Identifier :
- 10.1109/ASMC.2004.1309617
- Product Type:
- Conference Publications
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