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The ability to precisely determine epilayer thickness and Ge concentration in Si1-xGex is essential for calibrating growth processes and thus control film quality. Spectroscopic ellipsometry is a nondestructive optical technique and has advantages for in-line process monitoring over SIMS, TEM and other destructive techniques. With integrated UV-Vis-IR spectroscopic ellipsometer, not only epilayer thickness and Ge concentration can be obtained with the UV-Vis channel, but also dopant concentration with the IR channel. Therefore, an advanced SOPRA IRSE 300 metrology tool will be used to characterize Si1-xGex epilayers. The sub 50-nm Si1-xGex films were processed with LPCVD in an AMAT 5200 Centura platform. The precursors for Si1-xGex growth are SiH4 and GeH4. B2H6 was used as the p-type dopant source (B) for certain samples. CH3SiH3 was also utilized as a carbon source to minimize boron out diffusion. Five types of samples were prepared and characterized, which are (a) single Si1-xGex layer (Box), (b) Si1-xGex layer with Si cap, (c) Si1-xGex layer with graded Ge concentration, (d) Boron doped Si1-xGex layer and (e) carbon effect on both undoped and doped Si1-xGex epilayers. Uniformity for these samples was also examined, which is an essential measure for improving process performance and device yield. Finally, results from spectroscopic ellipsometry were compared with that from other technique such as XRD for thickness and %Ge.