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120-nm bandwidth erbium-doped fiber amplifier in parallel configuration

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3 Author(s)
Chien-Hung Yeh ; Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Chien-Chung Lee ; Sien Chi

A new S- to L-band erbium-doped fiber amplifier (EDFA) module, which reaches 120-nm gain bandwidth of 1480 to 1600 nm, has been experimentally investigated and demonstrated by using coupled structure. A 32.8-, 34.7-, and 38.1-dB peak gain is obtained at 1504, 1532, and 1568 nm, respectively, when the input signal power is -30 dBm. In addition, this proposed amplifier also provides a broad-band amplified spontaneous emission (ASE) light source of 1480-1606 nm with the output level above -40 dBm.

Published in:

Photonics Technology Letters, IEEE  (Volume:16 ,  Issue: 7 )