By Topic

Terahertz carrier dynamics and dielectric response of n-type GaN

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Azad, A.K. ; Sch. of Electr. & Comput. Eng., Oklahoma State Univ., Stillwater, OK, USA ; Zhang, W. ; Grischkowsky, D.

We report the first characterization of the complex conductivity and absorption of an n-type GaN freestanding crystal by terahertz time-domain spectroscopy (THz-TDS) over the frequency range from 0.1 to 4 THz. The measured conductivity was well fit by Drude theory.

Published in:

Lasers and Electro-Optics, 2003. CLEO '03. Conference on

Date of Conference:

6-6 June 2003