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Parallel-contact metal-contact RF-MEMS switches for high power applications

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3 Author(s)
Nishijima, N. ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; Hung, Juo-Jung ; Rebeiz, G.M.

Electrostatically-actuated metal-contact RF MEMS switches have been designed, fabricated and tested with an aim of handling moderately high RF power (hundreds of mW to 1 W). The design strategy is: (i) the development of a switch element having good metal contacts and reliability without stiction problems under moderate actuation voltage (50-60 V), and (ii) the reduction of RF current through each contact by arranging several mechanically-independent switch elements in parallel. The developed switch element is a relatively wide and thick cantilever having two contacts and should have a contact force of 70 μN per each contact at an applied voltage of 60 V based on the simulation. The measured pull-down voltage of 40-50 V has been obtained. By placing several switch elements in parallel, the insertion loss can be greatly reduced, and a loss as low as 0.03 dB at 2 GHz is obtained for an 8-contact switch (i.e. 4 switch elements) with a corresponding isolation of 22 dB at 2 GHz.

Published in:

Micro Electro Mechanical Systems, 2004. 17th IEEE International Conference on. (MEMS)

Date of Conference:

2004