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We are currently developing a monolithic electron field emission device and integrated electron optic components for multi-electron beam lithography microsystems basing on a SOI (Silicon On Insulator) wafer. In the Transducer' 03 conference, we have reported the concept, simulation, fabrication, emission and focusing characteristics of the device with Pt, Mo emitters. In this paper, we propose an advanced structure with the integration of the focusing, beam correction (stigmator) electrodes and metallic ring array for detection of secondary electrons emitted from the wafer. Initial results of utilizing boron doped diamond and carbon nanotubes (CNTs) emitters are presented. Both diamond and the CNTs were selectively grown using a hot-filament chemical vapor deposition (HF-CVD) technique. Results of field emission improvement of the bundle CNTs on a Si tip array by hydrogen (H2) treatment are demonstrated. The improvements of the emission current and the long-term stability were attributed to the reduction of the CNTs work function by the formation of C-H bonds.