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Polysilicon is commonly used as a structural material of MEMS after being deposited at a temperature below 600°C and annealed at a temperature around 1000°C to remove the residual stress. On the other hand, polysilicon can be also deposited at a temperature higher than 600°C. We have examined the strength of polysilicon films obtained with different processing temperatures using a new efficient tensile test structure with plural specimens bridging the gap of a silicon substrate. Films deposited at 560°C had the highest strength when annealed at 850°C. Films deposited at 625°C and annealed at 1050°C were weaker than those deposited at 560°C and annealed at 1050°C.
Date of Conference: 2004