Cart (Loading....) | Create Account
Close category search window

Cooling rate in diode laser bonding

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Fritz, M.A. ; Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada ; Cassidy, Daniel T.

Diode laser die bonding parameters were measured for the cases of slow cool and rapid cool die bonding processes. The thermal strain, solder composition and structure, thermal impedance, and bond strength of InP based diode lasers bonded to AlN chip carriers using pre-deposited Au-Sn solder were examined. Relative to the rapid cool process, the slow cool process was found on average: to induce greater strain in the laser chips; to exhibit a larger thermal impedance in the die bonds; to produce a rougher solder structure; and, to promote alloying of the solder material and chip carrier metallization.

Published in:

Components and Packaging Technologies, IEEE Transactions on  (Volume:27 ,  Issue: 1 )

Date of Publication:

March 2004

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.