Referenced Items are not available for this document.
The drain current-voltage characteristics of a chemical gas sensor based on a catalytic metal insulator silicon carbide field effect transistor (MISiC-FET) was measured in H2 and O2 ambient while applying negative substrate bias at temperatures up to 600°C. It is reported that the gas sensitivity can be amplified and the position of the base-line controlled by applying a negative substrate bias to the MISiC-FET device, which is a buried short channel device. This is possible in a wide range of drain current levels and over a large temperature range.
Published in:
Sensors, 2003. Proceedings of IEEE
(Volume:2
)
Date of Conference: 22-24 Oct. 2003
- Page(s):
- 1168 - 1173 Vol.2
- Print ISBN:
- 0-7803-8133-5
- INSPEC Accession Number:
- 7884710
- Digital Object Identifier :
- 10.1109/ICSENS.2003.1279129
- Product Type:
- Conference Publications
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