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Demonstration of a SiGe RF LNA design using IBM design kits in 0.18 μm SiGe BiCMOS technology

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6 Author(s)
Yiming Chen ; IBM Microelectron. Div., San Diego, CA, USA ; Xiaojuen Yuan ; Scagnelli, D. ; Mecke, J.
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A 1.5 GHz-2.0 GHz low noise amplifier (LNA) is designed in IBM 0.18 um BiCMOS technology using IBM design kits in cadence design flow. The fabricated LNA chip is packaged and tested. The measured results (gain, noise figure, and IIP3) correlate with the simulation very well. The results demonstrate that IBM SiGe technology, modeling, design kits and the cadence design flow are solid and accurate for RFIC design.

Published in:
Design, Automation and Test in Europe Conference and Exhibition, 2004. Proceedings  (Volume:3 )

Date of Conference: 16-20 Feb. 2004

Page(s):
22 - 27 Vol.3
ISSN :
1530-1591
Print ISBN:
0-7695-2085-5
INSPEC Accession Number:
7979909
Digital Object Identifier :
10.1109/DATE.2004.1269193

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