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On the FinFET extension implant energy

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5 Author(s)
Gossmann, H.-J.L. ; Axcelis Technol., Beverly, MA, USA ; Agarwal, A. ; Parrill, T. ; Rubin, L.M.
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The need of an ultrashallow junction technology for the extension of p-FinFETs has been investigated by integrated process and device simulations. For devices with 60 nm physical gate length, whose extensions are activated in a low thermal-budget process (spike anneal), it is found that the Ioff-Ion performance is invariant with respect to the extension implant energy. Nevertheless, the short-channel behavior worsens. This can be remedied by adding spacers to both sides of the gate before the extension implant, resulting in virtually identical dc characteristics and speed. Devices with gate lengths of 18 nm and below require dopant activation with negligible diffusion. Under those circumstances the short channel behavior of the FinFET is limited by the lateral straggle of the ion implant. Spacers may remedy what is otherwise poor short channel behavior due to a relatively high energy extension implant. However, this comes at the price of drastically worse drive current at a fixed off-current.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:2 ,  Issue: 4 )

Date of Publication:

Dec. 2003

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