Referenced Items are not available for this document.
We have demonstrated a novel three-dimensional multibridge-channel metal-oxide-semiconductor field-effect transistor (MBCFET). This transistor was successfully fabricated using a conventional complementary metal-oxide-semiconductor process. We introduce the fabrication technologies and electrical characteristics of MBCFET in comparison with a conventional planar MOSFET. The MBCFET has more benefits than a conventional MOSFET. It shows 4.6 times larger current drivability than a planar MOSFET. This is due to the vertically stacked multibridge channels. The subthreshold swing of MBCFET is 61 mV/dec, which is almost an ideal value due to the thin body surrounded by gate. Based on a simulation result, we show that the MBCFET will have a large on-off state current ratio at short channel transistors.
Published in:
Nanotechnology, IEEE Transactions on
(Volume:2
,
Issue:
4
)
Date of Publication: Dec. 2003
- Page(s):
- 253 - 257
- ISSN :
- 1536-125X
- INSPEC Accession Number:
- 7951800
- Digital Object Identifier :
- 10.1109/TNANO.2003.820777
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 19 February 2004
- Issue Date :
- Dec. 2003
- Sponsored by :
- IEEE Nanotechnology Council
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