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Poly-Si thin-film transistors (TFTs) with an asymmetric dual-gate, which reduces the kink current considerably, have been proposed and fabricated without any additional mask. Asymmetric dual-gate TFTs consist of a long gate and a short gate, which are located near the source and the drain, respectively. In the saturation regime, the short gate would induce the pinchoff near the drain, while the long gate may operate in the linear mode so that the kink effect only occurs at the channel under short gate. We have successfully fabricated asymmetric dual-gate TFTs and experimental results show that the kink current is successfully reduced. We also performed numerical simulation of electrical potential at the floated n+ region in order to verify the experimental result.