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Light guide for pixel crosstalk improvement in deep submicron CMOS image sensor

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11 Author(s)
Hsu, T.H. ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Taiwan, Taiwan ; Fang, Y.K. ; Lin, C.Y. ; Chen, S.F.
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Light guide, a novel dielectric structure consisting of PE-Oxide and FSG-Oxide, has been developed to reduce crosstalk in 0.18-μm CMOS image sensor technology. Due to the difference in refraction index (1.46 for PE-Oxide and 1.435 for FSG-Oxide), major part of the incident light can be totally reflected at the interface of PE-Oxide/FSG-Oxide, as the incidence angle is larger than total reflection angle. With this light guide, the pixel sensing capability can be enhanced and to reduce pixel crosstalk. Small pixels with pitch 3.0-μm and 4.0-μm have been characterized and examined. In 3.0-μm pixel, optical crosstalk achieves 30% reduction for incidence angle of light at 10/spl deg/.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 1 )