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Postgrowth control of the quantum-well band edge for the monolithic integration of widely tunable lasers and electroabsorption modulators

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5 Author(s)
E. J. Skogen ; Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA ; J. W. Raring ; J. S. Barton ; S. P. DenBaars
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We describe a quantum-well intermixing process for the monolithic integration of various devices, each with a unique band edge. The process involves a single ion implant followed by multiple etch and anneal cycles. We have applied this method to design and fabricate widely tunable sampled-grating distributed Bragg reflector lasers with integrated electroabsorption modulators. The devices employ three unique band edges, and demonstrate exceptional tuning, gain, and absorption characteristics.

Published in:

IEEE Journal of Selected Topics in Quantum Electronics  (Volume:9 ,  Issue: 5 )