Referenced Items are not available for this document.
In this work, we explore the worst case bias response of fully depleted transistors. Floating body and external body ties transistors fabricated on different SOI substrates are characterized using X-rays. The influence of gate length is presented. The coupling effect between front and back gate as well as latch triggered by floating body effect are evaluated as a function of dose level.
Published in:
Nuclear Science, IEEE Transactions on
(Volume:50
,
Issue:
6
)
Date of Publication: Dec. 2003
- Page(s):
- 2316 - 2321
- ISSN :
- 0018-9499
- INSPEC Accession Number:
- 7943014
- Digital Object Identifier :
- 10.1109/TNS.2003.822594
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 February 2004
- Issue Date :
- Dec. 2003
- Sponsored by :
- IEEE Nuclear and Plasma Sciences Society
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