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A fully integrated 0.18-μm CMOS direct conversion receiver front-end with on-chip LO for UMTS

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4 Author(s)
Gatta, F. ; Dept. of Electron., Univ. of Pavia, Italy ; Manstretta, D. ; Rossi, P. ; Svelto, F.

This paper presents a 0.18-μm CMOS direct-conversion IC realized for the Universal Mobile Telecommunication System (UMTS). The chip comprises a variable gain low-noise amplifier, quadrature mixers, variable gain amplifiers, and local oscillator generation circuits. The solution is based on very high dynamic range front-end blocks, a low-power superharmonic injection-locking technique for quadrature generation and continuous-time dc offset removal. Measured performances are an overall gain variable between 21 and 47 dB, 5.6 dB noise figure, -2 dBm out-of-band IIP3, -10 dBm in-band IIP3, 44.8-dBm minimum IIP2, and -155-dBc/Hz phase noise at 135 MHz from carrier frequency, while drawing 21 mA from a 1.8-V supply.

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Solid-State Circuits, IEEE Journal of  (Volume:39 ,  Issue: 1 )