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Light emission near 1.3 μm using ITO-Al2O3-Si0.3Ge0.7-Si tunnel diodes

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6 Author(s)
Lin, C.Y. ; Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Taiwan, Taiwan ; Chin, Albert ; Hou, Y.T. ; Li, M.F.
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We have fabricated Sn : In2O3 (ITO)-Al2O3 dielectric on Si1-xGex-Si metal-oxide-semiconductor tunnel diodes which emit light at around 1.3 μm, for x=0.7. The emitted photon energy is smaller than the bandgap energy of Si, thus, avoiding strong light absorption by the Si substrate. The optical device structure is compatible with that of a metal-oxide-semiconductor field-effect transistor, since a conventional doped poly-Si gate electrode will be transparent to the emitted light. Increasing the Ge composition from 0.3 to 0.4 only slightly decreases the light-emitting efficiency.

Published in:

Photonics Technology Letters, IEEE  (Volume:16 ,  Issue: 1 )

Date of Publication:

Jan. 2004

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