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High-performance quantum-dot superluminescent diodes

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6 Author(s)
Zhang, Z.Y. ; Key Lab. of Semicond. Mater. Sci., Chinese Acad. of Sci., Beijing, China ; Wang, Z.G. ; Xu, B. ; Jin, P.
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By inclining the injection stripe of a multiple layer stacked self-assembled InAs quantum dot (SAQD) laser diode structure of 6° with respect to the facets, high-power and broad-band superluminescent diodes (SLDs) have been fabricated. It indicates that high-performance SLD could be easily realized by using SAQD as the active region.

Published in:

Photonics Technology Letters, IEEE  (Volume:16 ,  Issue: 1 )

Date of Publication:

Jan. 2004

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