Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

Electron mobility in dense argon gas at several temperatures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
2 Author(s)
Borghesani, A.F. ; Dept. of Phys., Univ. of Padua, Italy ; Lamp, P.

The mobility μ of excess electrons in dense Argon gas was measured as a function of the applied electric field E and of the gas density N at several temperatures in the range 142.6 < T < 200 K, encompassing the critical temperature Tc = 150.86 K We report here measurements up to N ≈ 7 nm-3, close to the critical density, Nc ≈ 8.1 nm-3. At all temperatures, and up to moderately high densities, the density-normalized mobility μN shows the usual electric field dependence in a gas with a Ramsauer-Townsend minimum due to the mainly attractive electron-atom interaction. μN is constant and field independent for small E, shows a maximum for a reduced field E/N ≈ 4 mTd, and then decreases rapidly with the field. The zero field density-normalized mobility μ0N, for all T > Tc, shows the well known anomalous positive density effect, i.e., μ0N increases with increasing N. Below T,, however, μ0N does not show the expected effect, but features a broad maximum. This appears to be a crossover behavior between the positive density effect shown for T > T, and the small negative effect previously observed for T ≈ 90 K However, the data at all temperatures confirm the interpretation of the anomalous density effect as being essentially due by the density-dependent quantum shift of the electron ground state kinetic energy in a disordered medium as a result of multiple scattering (MS) processes, although other MS processes influence the experimental outcome.

Published in:

Dielectrics and Electrical Insulation, IEEE Transactions on  (Volume:10 ,  Issue: 6 )